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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/10999

Title: Hall hole mobility in boron-doped homoepitaxial diamond
Authors: Pernot, J.
Volpe, P. N.
Omnes, F.
Muret, P.
MORTET, Vincent
Teraji, T.
Issue Date: 2010
Citation: PHYSICAL REVIEW B, 81(20)
Abstract: Hall hole mobility of boron-doped homoepitaxial (100) diamond samples has been investigated in the temperature range of 100-900 K, both experimentally and theoretically. The temperature dependence of the mobility measured in high-quality and low boron-doped materials was compared with theoretical calculations to determine the phonon-hole coupling constants (deformation potential for acoustic phonons and coupling constant for optical phonons). The maximum hole mobility is found to be close to 2000 cm(2)/Vs at room temperature. For boron-doped material, the hole scattering by neutral boron atoms is shown to be important in diamond due to the high ionization energy of the boron acceptor. The doping dependence of the Hall hole mobility is established for boron-doping levels ranging between 10(14) and 10(20) cm(-3) at 300 and 500 K. The physical reasons which make diamond a semiconductor with a higher mobility than other semiconductors of column IV are discussed.
Notes: [Pernot, J.; Volpe, P. N.; Omnes, F.; Muret, P.] CNRS, Inst NEEL, F-38042 Grenoble 9, France. [Pernot, J.; Volpe, P. N.; Omnes, F.; Muret, P.] Univ Grenoble 1, F-38042 Grenoble, France. [Mortet, V.; Haenen, K.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Mortet, V.; Haenen, K.] IMEC Vzw, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Teraji, T.] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan. julien.pernot@grenoble.cnrs.fr
URI: http://hdl.handle.net/1942/10999
DOI: 10.1103/PhysRevB.81.205203
ISI #: 000278144500041
ISSN: 1098-0121
Category: A1
Type: Journal Contribution
Validation: ecoom, 2011
Appears in Collections: Research publications

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