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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/10973

Title: Stress in (110)-textured phosphorus-doped polycrystalline diamond studied by Raman and cathodoluminescence spectroscopies
Authors: Habka, N.
Barjon, Julien
LAZEA, Andrada
Issue Date: 2010
Abstract: In this work, we investigate the stress developed in phosphorus-doped layers grown on (110)-textured polycrystalline diamond templates. To that end, we follow the shifts of the diamond Raman diffusion and the exciton recombination energies by Raman and cathodoluminescence spectroscopies, respectively. With each approach, a high tensile strain of several gigapascal is evidenced. Moreover, Raman mapping performed in cross section shows (i) at the grain boundaries, a strain in tension that propagates along the growth direction from the template to the deposited layer and (ii) at the center of each grain, a tensile strain of the phosphorus-doped layer with respect to the underlying undoped grain. Concerning the second, we observe also an increase in strain effects at high phosphorus incorporation, together with a structural degradation. The possible origins of such high lattice deformation of phosphorus-doped layers are discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428452]
Notes: [Habka, N.; Barjon, J.] Univ Versailles St Quentin, CNRS, GEMaC, F-92195 Meudon, France. [Lazea, A.; Haenen, K.] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Lazea, A.; Haenen, K.] IMEC Vzw, Div IMOMEC, B-3590 Diepenbeek, Belgium. nada.habka@cnrs-bellevue.fr
URI: http://hdl.handle.net/1942/10973
DOI: 10.1063/1.3428452
ISI #: 000278182400056
ISSN: 0021-8979
Category: A1
Type: Journal Contribution
Validation: ecoom, 2011
Appears in Collections: Research publications

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