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|Title: ||Stress in (110)-textured phosphorus-doped polycrystalline diamond studied by Raman and cathodoluminescence spectroscopies|
|Authors: ||Habka, N.|
|Issue Date: ||2010|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||JOURNAL OF APPLIED PHYSICS, 107(10)|
|Abstract: ||In this work, we investigate the stress developed in phosphorus-doped layers grown on (110)-textured polycrystalline diamond templates. To that end, we follow the shifts of the diamond Raman diffusion and the exciton recombination energies by Raman and cathodoluminescence spectroscopies, respectively. With each approach, a high tensile strain of several gigapascal is evidenced. Moreover, Raman mapping performed in cross section shows (i) at the grain boundaries, a strain in tension that propagates along the growth direction from the template to the deposited layer and (ii) at the center of each grain, a tensile strain of the phosphorus-doped layer with respect to the underlying undoped grain. Concerning the second, we observe also an increase in strain effects at high phosphorus incorporation, together with a structural degradation. The possible origins of such high lattice deformation of phosphorus-doped layers are discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428452]|
|Notes: ||[Habka, N.; Barjon, J.] Univ Versailles St Quentin, CNRS, GEMaC, F-92195 Meudon, France. [Lazea, A.; Haenen, K.] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Lazea, A.; Haenen, K.] IMEC Vzw, Div IMOMEC, B-3590 Diepenbeek, Belgium.
|ISI #: ||000278182400056|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2011|
|Appears in Collections: ||Research publications|
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