Document Server@UHasselt >
Research publications >
Please use this identifier to cite or link to this item:
|Title: ||Atomic Layer Deposition of Gd-Doped HfO2 Thin Films|
|Authors: ||Adelmann, C.|
VAN BAEL, Marlies
Kittl, J. A.
Van Elshocht, S.
|Issue Date: ||2010|
|Publisher: ||ELECTROCHEMICAL SOC INC|
|Citation: ||JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(4). p. G105-G110|
|Abstract: ||GdxHf1-xOy thin films were deposited by atomic layer deposition (ALD) using tris(isopropyl-cyclopentadienyl) gadolinium [Gd((PrCp)-Pr-i)(3)] and HfCl4 in combination with H2O as an oxidizer. Growth curves showed a nearly ideal ALD behavior. The growth per individual Gd((PrCp)-Pr-i)(3)/H2O or HfCl4/H2O cycle was 0.55 A degrees, independent of the Gd/(Gd+Hf) composition x in the studied range. This indicates that the amount of HfO2 deposited during a HfCl4/H2O cycle was essentially identical to the amount of Gd2O3 deposited during a Gd((PrCp)-Pr-i)(3)/H2O cycle, assuming identical atomic densities of the films independent of composition. The crystallization of GdxHf1-xOy with Gd/(Gd+Hf) contents x between 7 and 30% was studied. Films with x greater than or similar to 10% crystallized into a cubic/tetragonal HfO2-like phase during spike or laser annealing up to 1300 degrees C, demonstrating that the cubic/tetragonal phase is thermally stable in this temperature range. A maximum dielectric constant of kappa similar to 36 was found for a Gd/(Gd+Hf) concentration of x similar to 11%.|
|Notes: ||[Adelmann, C.; Tielens, H.; Swerts, J.; Rosseel, E.; Shi, X.; Kittl, J. A.; Van Elshocht, S.] IMEC, B-3001 Louvain, Belgium. [Dewulf, D.; Hardy, A.; Van Bael, M. K.] Hasselt Univ, Inst Mat Res Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium. [Dewulf, D.; Hardy, A.; Van Bael, M. K.] IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Pierreux, D.] ASM Belgium, B-3001 Louvain, Belgium.
|ISI #: ||000275586800068|
|Type: ||Journal Contribution|
|Validation: ||ecoom, 2011|
|Appears in Collections: ||Research publications|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.