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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/10805

Title: Atomic Layer Deposition of Gd-Doped HfO2 Thin Films
Authors: Adelmann, C.
Tielens, H.
DEWULF, Daan
HARDY, An
Pierreux, D.
Swerts, J.
Rosseel, E.
Shi, X.
VAN BAEL, Marlies
Kittl, J. A.
Van Elshocht, S.
Issue Date: 2010
Publisher: ELECTROCHEMICAL SOC INC
Citation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(4). p. G105-G110
Abstract: GdxHf1-xOy thin films were deposited by atomic layer deposition (ALD) using tris(isopropyl-cyclopentadienyl) gadolinium [Gd((PrCp)-Pr-i)(3)] and HfCl4 in combination with H2O as an oxidizer. Growth curves showed a nearly ideal ALD behavior. The growth per individual Gd((PrCp)-Pr-i)(3)/H2O or HfCl4/H2O cycle was 0.55 A degrees, independent of the Gd/(Gd+Hf) composition x in the studied range. This indicates that the amount of HfO2 deposited during a HfCl4/H2O cycle was essentially identical to the amount of Gd2O3 deposited during a Gd((PrCp)-Pr-i)(3)/H2O cycle, assuming identical atomic densities of the films independent of composition. The crystallization of GdxHf1-xOy with Gd/(Gd+Hf) contents x between 7 and 30% was studied. Films with x greater than or similar to 10% crystallized into a cubic/tetragonal HfO2-like phase during spike or laser annealing up to 1300 degrees C, demonstrating that the cubic/tetragonal phase is thermally stable in this temperature range. A maximum dielectric constant of kappa similar to 36 was found for a Gd/(Gd+Hf) concentration of x similar to 11%.
Notes: [Adelmann, C.; Tielens, H.; Swerts, J.; Rosseel, E.; Shi, X.; Kittl, J. A.; Van Elshocht, S.] IMEC, B-3001 Louvain, Belgium. [Dewulf, D.; Hardy, A.; Van Bael, M. K.] Hasselt Univ, Inst Mat Res Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium. [Dewulf, D.; Hardy, A.; Van Bael, M. K.] IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Pierreux, D.] ASM Belgium, B-3001 Louvain, Belgium. christoph.adelmann@imec.be
URI: http://hdl.handle.net/1942/10805
DOI: 10.1149/1.3301663
ISI #: 000275586800068
ISSN: 0013-4651
Category: A1
Type: Journal Contribution
Validation: ecoom, 2011
Appears in Collections: Research publications

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