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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/10667

Title: Polymer Field-Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene, Two Insulator Layers, and a Metal Ink Gate
Authors: Voigt, Monika M.
Guite, Alexander
Chung, Dae-Young
Khan, Rizwan U. A.
Campbell, Alasdair J.
Bradley, Donal D. C.
Meng, Fanshun
Steinke, Joachim H. G.
Tierney, Steve
McCulloch, Iain
PENXTEN, Huguette
LUTSEN, Laurence
Brokmann, Ulrike
Soennichsen, Karin
Huelsenberg, Dagmar
Bock, Wolfgang
Barron, Cecile
Blanckaert, Nicolas
Springer, Simon
Grupp, Joachim
Mosley, Alan
Issue Date: 2010
Citation: ADVANCED FUNCTIONAL MATERIALS, 20(2). p. 239-246
Abstract: The mass production technique of gravure contact printing is used to fabricate state-of-the art polymer field-effect transistors (FETs). Using plastic substrates with prepatterned indium tin oxide source and drain contacts as required for display applications, four different layers are sequentially gravure-printed: the semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT), two insulator layers, and an Ag gate. A crosslinkable insulator and an Ag ink are developed which are both printable and highly robust. Printing in ambient and using this bottom-contact/top-gate geometry, an on/off ratio of >10(4) and a mobility of 0.04 cm(2) V-1 s(-1) are achieved. This rivals the best top-gate polymer FETs fabricated with these materials. Printing using low concentration, low viscosity ink formulations, and different P3HT molecular weights is demonstrated. The printing speed of 40 m min(-1) on a flexible polymer substrate demonstrates that very high-volume, reel-to-reel production of organic electronic devices is possible.
Notes: [Voigt, Monika M.; Guite, Alexander; Chung, Dae-Young; Khan, Rizwan U. A.; Campbell, Alasdair J.; Bradley, Donal D. C.] Univ London Imperial Coll Sci Technol & Med, Expt Solid State Grp, Blackett Lab, London SW7 2AZ, England. [Voigt, Monika M.; Guite, Alexander; Chung, Dae-Young; Khan, Rizwan U. A.; Campbell, Alasdair J.; Bradley, Donal D. C.] Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, Dept Phys, Blackett Lab, London SW7 2AZ, England. [Meng, Fanshun; Steinke, Joachim H. G.] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England. [Tierney, Steve; McCulloch, Iain] Merck Chem, Southampton SO16 7QD, Hants, England. [Penxten, Huguette; Lutsen, Laurence; Douheret, Olivier; Manca, Jean] Hasselt Univ, Inst Mat Res, Div IMOMEC IMEC, B-3590 Diepenbeek, Belgium. [Brokmann, Ulrike; Soennichsen, Karin; Huelsenberg, Dagmar] Tech Univ Ilmenau, D-98684 Ilmenau, Germany. [Bock, Wolfgang] Norbert Schlafli Maschinen, CH-4800 Zofingen, Switzerland. [Barron, Cecile; Blanckaert, Nicolas; Springer, Simon; Grupp, Joachim] Swatch Grp R&D SA Asulab, CH-2074 Marin, Switzerland. [Mosley, Alan] IC Consultants Ltd, London SW7 2PG, England. m.voigt@imperial.ac.uk; alasdair.campbell@imperial.ac.uk
URI: http://hdl.handle.net/1942/10667
DOI: 10.1002/adfm.200901597
ISI #: 000274269300008
ISSN: 1616-301X
Category: A1
Type: Journal Contribution
Validation: ecoom, 2011
Appears in Collections: Research publications

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