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Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/10293

Title: On the thermal expansion coefficient of CoSi2 and NiSi2
Authors: Smeets, D.
VANHOYLAND, Geert
D'HAEN, Jan
Vantomme, A.
Issue Date: 2009
Publisher: IOP PUBLISHING LTD
Citation: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 42(23)
Abstract: We have accurately determined the thermal expansion coefficients of CoSi2 and NiSi2 using high-temperature x-ray diffraction in the temperature range 300-850 K, resolving the ambiguity in the values reported in the literature. The room temperature (298 K) linear thermal expansion coefficients (alpha = (1/a(0))(partial derivative a/partial derivative T)) for CoSi2 and NiSi2 are found to be alpha CoSi2 = 14.4 +/- 0.6 x 10(-6)K(-1) and alpha(NiSi2) = 14.4 +/- 0.7 x 10(-6) K-1, respectively. Our results, however, strongly suggest that the thermal expansion coefficient of NiSi2 is temperature dependent and we recommend to use alpha(NiSi2) (T) = [(14.3 +/- 0.5) + (0.006 +/- 0.002) (T - 273K)] x 10(-6) K-1 whenever an accurate value of the NiSi2 thermal expansion coefficient is needed.
Notes: [Smeets, D.; Vantomme, A.] Katholieke Univ Leuven, Inst Kern & Stralingsfys, B-3001 Louvain, Belgium. [Smeets, D.; Vantomme, A.] Katholieke Univ Leuven, INPAC, B-3001 Louvain, Belgium. [Vanhoyland, G.; D'Haen, J.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Vanhoyland, G.; D'Haen, J.] IMEC VZW, Div IMOMEC, Diepenbeek, Belgium.
URI: http://hdl.handle.net/1942/10293
DOI: 10.1088/0022-3727/42/23/235402
ISI #: 000271855000033
ISSN: 0022-3727
Category: A1
Type: Journal Contribution
Validation: ecoom, 2010
Appears in Collections: Research publications

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